在最近的实验中，PN结型量子阱结构被观察到反常的载流子输运情况，其相应的物理机制和载流子输运模型被提出。通过系统实验观察到，PN结量子阱结构材料在共振激发模式下，仍可测出开路电压或短路电流。对比开路和短路情况下的光致荧光（PL）光谱，发现短路下PL强度明显降低。这说明短路状态下的光生载流子没有被限制在量子阱内，而是逃逸出结区。这种载流子逃出量子阱的现象却没有在等量偏压下的NN型量子阱结构中发现，说明载流子逃出量子阱并非由传统的热激发或隧穿的作用导致。据此，笔者提出了相应的物理机制和载流子输运模型对此现象进行解释，认为光生载流子能在PN结内建电场的作用下直接逃出量子阱，并且辐射复合发光发生在载流子逃逸过程之后。

An internal photoemission-based silicon photodetector detects light below the silicon bandgap at room temperature and can exhibit spectrally broad behavior, making it potentially suited to meet the need for a near-infrared pure Si photodetector. In this work, the implementation of a thin Au insertion layer into an ITO/n-Si Schottky photodetector can profoundly affect the barrier height and significantly improve the device performance. By fabricating a nanoscale thin Au layer and an ITO electrode on a silicon substrate, we achieve a well-behaved ITO/Au/n-Si Schottky diode with a record dark current density of 3.7×10-7A/cm2 at -1V and a high rectification ratio of 1.5×108 at ±1V. Furthermore, the responsivity has been obviously improved without sacrificing the dark current performance of the device by decreasing the Au thickness. Such a silicon-based photodetector with an enhanced performance could be a promising strategy for the realization of a monolithic integrated pure silicon photodetector in optical communication.